TSM4424CSRVG datasheet(2/6 Pages) TSC

2 / 6 page

TSM4424

20V N-Channel MOSFET

2/6

Version: C14

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

(Note 2)

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

0.65

Gate Body Leakage

VGS = ±8V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 20V, VGS = 0V

IDSS

1.0

On-State Drain Current

VDS =5V, VGS = 4.5V

ID(ON)

Drain-Source On-State Resistance

VGS = 4.5V, ID = 4.5A

RDS(ON)

VGS = 2.5V, ID = 3.5A

VGS = 1.8V, ID = 2.0A

Forward Transconductance

VDS = 10V, ID = 6A

gfs

Diode Forward Voltage

IS = 1.7A, VGS = 0V

VSD

0.8

1.2

Dynamic

(Note 3)

Total Gate Charge

VDS = 10V, ID = 4.5A,

VGS = 4.5V

11.2

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

2.2

Input Capacitance

VDS = 10V, VGS = 0V,

f = 1.0MHz

Ciss

500

Output Capacitance

Coss

300

Reverse Transfer Capacitance

Crss

140

Switching

(Note 4)

Turn-On Delay Time

VDD = 10V, RL = 10Ω,

ID = 1A, VGEN = 4.5V,

RG = 6Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Notes:

Pulse width limited by the maximum junction temperature

Pulse test: PW

≤ 300µs, duty cycle ≤ 2%

For DESIGN AID ONLY, not subject to production testing.

Switching time is essentially independent of operating temperature.

TSM4424CSRVG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM4424CSRVG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL