DP0150ALP4 / DP0150BLP4

Document number: DS31493 Rev. 7 - 2

2 of 5

www.diodes.com

May 2015

© Diodes Incorporated

DP0150ALP4 / DP0150BLP4

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current - Continuous

-100

mA

Peak Pulse Collector Current

-200

mA

Base Current

-30

mA

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

400

mW

(Note 6)

1000

Thermal Resistance, Junction to Ambient

(Note 5)

310

°C/W

(Note 6)

120

Thermal Resistance, Junction to Lead

(Note 7)

120

°C/W



Operating and Storage and Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

-50

—

—

V

Collector-Emitter Breakdown Voltage (Note 8)

-50

—

—

V

Emitter-Base Breakdown Voltage

-5

—

—

V

Collector Cut-Off Current

—

—

-0.1

μA

Emitter Cut-Off Current

—

—

-0.1

μA

ON CHARACTERISTICS (Note 9)

Collector-Emitter Saturation Voltage

—

-0.15

-0.3

V

DC Current Gain

DP01510ALP4

DP01510BLP4

120

—

240

—

200

—

400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

80

—

—

MHz

f = 30MHz

Output Capacitance

—

1.6

—

pF

f = 1MHz

Notes:

5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.

6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.

7. Thermal resistance from junction to solder-point (on the exposed collector pad).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

9. Measured under pulsed conditions. Pulse width

 300µs. Duty cycle  2%.