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MMBT2222ALP4 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # MMBT2222ALP4
Description  40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBT2222ALP4 Datasheet(HTML) 2 Page - Diodes Incorporated

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MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
2 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
600
mA
Peak Collector Current
ICM
800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
460
mW
Power Dissipation (Note 6)
PD
1
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
272
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
120
°C/W
Thermal Resistance, Junction to Lead (Note 7)
RθJL
110
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
≥ 8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
≥ 400
V
C
Notes:
5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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