SDF02N65 datasheet(2/11 Pages) SAMHOP

2 / 11 page

www.samhop.com.tw

Dec,24,2013

Ver 2.1

4 Symbol

Min

Typ

Max

Units

BVDSS

650

IGSS

±100

VGS(th)

gFS

1.7

VSD

CISS

302

COSS

CRSS

15.2

16.4

Qgs

Qgd

9.6

tD(ON)

1.4

tD(OFF)

2.2

Gate-Drain Charge

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=325V

ID=1A

VGS=10V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=325V,ID=1A,VGS=10V

Fall Time

Turn-On Delay Time

ohm

VGS=10V , ID=1A

VDS=20V , ID=1A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=520V , VGS=0V

VGS= ±30V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

5.6

f=1.0MHz

VDS=325V,ID=1A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=1A

1.4

4.4

0.8

Notes

a.Drain current limited by maximum junction temperatrue.

b.Guaranteed by design, not subject to production testing.

c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)

SDP02N65

SDF02N65

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