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SDF07N50T Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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SDF07N50T Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 8 page ![]() S mHop Microelectronics C orp. a FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220F Package. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Dec,31,2013 1 Details are subject to change without notice. S G D Ver 2.1 G D S SDF SERIES TO-220F ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) PRODUCT SUMMARY VDSS ID RDS(ON) ( Ω) Typ 7A 500V 1.2 @ VGS=10V Symbol VDS VGS IDM W A PD °C -55 to 175 ID Units Parameter 500 V V TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS Drain Current-Continuous -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG °C/W Thermal Resistance, Junction-to-Ambient R JA TC=25°C 7.0 20 ±30 TC=100°C A 4.9 W TC=100°C °C/W Thermal Resistance, Junction-to-Case R JC a EAS Single Pulse Avalanche Energy c mJ 225 31 16 62.5 4.8 SDF07N50T ORDERING INFORMATION Ordering Code Package Marking Code Delivery Mode RoHS Status SDF07N50PT TO-220F 07N50T Tube Pb Free Limit |
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