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SDF18N50 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # SDF18N50
Description  Super high dense cell design for low RDS(ON).
PDF  11 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDF18N50 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Dec,24,2013
2
Ver 1.1
4 Symbol
Min
Typ
Max
Units
BVDSS
500
V
1
IGSS
±100
nA
VGS(th)
3
V
VSD
CISS
2500
pF
COSS
400
pF
CRSS
40
pF
Qg
70
nC
190
nC
Qgs
100
nC
Qgd
100
tD(ON)
ns
tr
14
ns
tD(OFF)
22
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=250V
ID=1A
RGEN= 25 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=400V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=9.0A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=400V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
5
0.32
b
f=1.0MHz
b
VDS=400V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=18A
1.5
V
50
0.25
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=5.5mH,VDD = 50V.
SDP18N50
SDF18N50



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