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STM4432 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STM4432
Description  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4432 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
1
V
9
gFS
25
S
VSD
CISS
1375
pF
COSS
220
pF
CRSS
170
pF
Qg
25
nC
31
nC
Qgs
63
nC
Qgd
19
tD(ON)
27
ns
tr
3.5
ns
tD(OFF)
6.5
ns
tf
ns
Gate-Drain Charge
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=20V,ID=12A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=12A
VDS=10V , ID=12A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=32V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=10A
12
m ohm
c
f=1.0MHz
c
VDS=20V,ID=12A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.76
1.3
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD=20V.(See Figure13)
_
_
STM4432
Ver 1.0
www.samhop.com.tw
Nov,03,2010
2
nC
VDS=20V,ID=12A,VGS=4.5V
13
_
1.7
11
15
IS
Maximum Continuous Drain-Source Diode Forward Current
2
A



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