LESHAN RADIO COMPANY, LTD.

MMBD110. 330. 770T1–2/4

MMBD110T1 MMBD330T1 MMBD770T1

NOTES ON TESTING AND SPECIFICATIONS

Note 1 — C

(Boonton Electronics Model 75A or equivalent).

Note 2 — Noise figure measured with diode under test in tuned

diode mount using UHF noise source and local oscillator (LO)

frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW.

I

Figure 5. Noise Figure Test Circui

TYPICAL CHARACTERISTICS

MMBD110T1

Figure 1. Reverse Leakage

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

Figure 3. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Noise Figure

PLO, LOCAL OSCILLATOR POWER (mW)

0.1

0.2

0.5

1.0

2.0

5.0

10

11

10

9

8

7

6

5

4

3

2

1

0

1.0

2.0

3.0

4.0

1.0

0.9

0.8

0.7

0.6

0.3

0.4

0.5

0.6

100

10

1.0

0.1

0.7

0.8

30

40

50

60

70

80

100

1.0

130

110

120

90

0.7

0.5

0.2

0.1

0.07

0.05

0.02

0.01

VR = 3.0 Vdc

LOCAL OSCILLATOR FREQUENCY = 1.0 GHz

(Test Circuit Figure 5)

TA = – 40°C

TA = 85°C

TA = 25°C

MMBD110T1

MMBD110T1

MMBD110T1

MMBD110T1