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LED565-66-60 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED565-66-60 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() 17.08.2011 LED565-66-60 1 of 2 LED565-66-60 TECHNICAL DATA High Power LED Array, 60 chips GaP LED565-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency GaP diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin. These devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. Specifications • Structure: GaP, 60 LED chips • Peak Wavelength: typ. 565 nm • Optical Output Power: typ. 8 mW • Package: TO-66 stem with AIN, clear epoxy resin Absolute Maximum Ratings (TC=25°C) Item Symbol Value Unit Power Dissipation PD 6.5 W Forward Current IF 500 mA Pulsed Forward Current * 1 IFP 600 mA Reverse Voltage VR 50 V Junction Temperature TJ 100 °C Operating Temperature Topr -30 … +85 °C Storage Temperature Tstg -30 … +110 °C Soldering Temperature * 2 Tsol 265 °C * 1 duty = 1%, pulse width = 1 µs * 2 must be completed within 3 seconds (Unit: mm) Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Total Radiated Power PO IF = 240 mA - 8 - mW Brightness IV IF = 240 mA - 1.25 - cd Forward Voltage VF IF = 240 mA - 11.0 - V Reverse Voltage VR IR = 10 µA 50 - - V Peak Wavelength λ P IF = 240 mA 550 565 575 nm Half Width Δλ IF = 240 mA - 15 - nm Viewing Half Angle Θ 1/2 IF = 240 mA - ±65 - deg. Heat Sink is required, thermal resistance <8K/W Notes • This high power LED must be cooled! • Do not view directly into the emitting area of the LED during operation! • The above specifications are for reference purpose only and subjected to change without prior notice. |
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