HFP5N80 datasheet(3/8 Pages) SEMIHOW

Part #	HFP5N80

Description	Superior Avalanche Rugged Technology

PDF	8 Pages

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

Direct Link	http://www.semihow.com

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3 / 8 page

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iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Typical Characteristics

DS = 400V

DS = 160V

DS = 640V

* Note : I

D = 5.0A

G, Total Gate Charge [nC]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

D, Drain Current [A]

DS, Drain-Source Voltage [V]

GS, Gate-Source Voltage [V]

SD, Source-Drain voltage [V]

HFP5N80 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd.