HFS8N70S datasheet(3/7 Pages) SEMIHOW

Part #	HFS8N70S

Description	Superior Avalanche Rugged Technology

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

Direct Link	http://www.semihow.com

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3 / 7 page

GS, Gate-Source Voltage [V]

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

-1

150

Note :

1. V

GS = 0V

2. 250 s Pulse Test

SD, Source-Drain voltage [V]

0.5

1.0

1.5

2.0

2.5

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS, Drain-Source Voltage [V]

1216

2024

G, Total Gate Charge [nC]

DS = 130V

DS = 325V

DS = 520V

* Note : I

D=7.0A

VDS=140V

VDS=350V

VDS=560V

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