DMN6066SSS

Document Number DS33047 Rev. 3 - 2

2 of 9

www.diodes.com

April 2015

© Diodes Incorporated

DMN6066SSS

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

(Note 6)

±

20

V

Single Pulsed Avalanche Energy

(Note 11)

37.5

mJ

Single Pulsed Avalanche Current

(Note 11)

5.0

A

Continuous Drain Current

(Note 8)

5.0

A

4.0

(Note 7)

3.7

Pulsed Drain Current

(Note 9)

23

A

Continuous Source Current (Body diode)

(Note 8)

4.0

A

Pulsed Source Current (Body diode)

(Note 9)

23

A

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 7)

1.56

12.5

W

mW/°C

(Note 8)

2.81

22.5

Thermal Resistance, Junction to Ambient

(Note 7)

80.0

°C/W

(Note 8)

44.5

Thermal Resistance, Junction to Lead

(Note 10)

37.0

Operating and Storage Temperature Range

-55 to 150

°C

Notes:

7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

8. Same as note (7), except the device is measured at t ≤ 10 sec.

9. Same as note (7), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

10. Thermal resistance from junction to solder-point (at the end of the drain lead).