DMN55D0UT

Document number: DS31330 Rev. 5 - 2

4 of 5

www.diodes.com

December 2012

© Diodes Incorporated

DMN55D0UT

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0.5

0.6

0.7

0.8

0.9

1.0

1.1

I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

0.0001

0.001

0.01

0.1

1

0.1

0.3

0.5

0.7

0.9

1.1

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.001

0.01

0.1

1

100

Fig. 9 Transient Thermal Response

0.00001

0.0001

0.001

0.01

0.1

1

10

t , PULSE DURATION TIME (s)

1

0.000001

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

JA

12

θ

R

(t) = r(t) * R

R

= 625°C/W

θθ

θ

JA

JA

JA

P(pk)

t

2

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT523

Dim

Min

Max

Typ

A

0.15

0.30

0.22

B

0.75

0.85

0.80

C

1.45

1.75

1.60

D

⎯

⎯

0.50

G

0.90

1.10

1.00

H

1.50

1.70

1.60

J

0.00

0.10

0.05

K

0.60

0.80

0.75

L

0.10

0.30

0.22

M

0.10

0.20

0.12

N

0.45

0.65

0.50

α

0°

8°

⎯

All Dimensions in mm

A

M

J

L

D

B C

H

K

G

N