DMP2004DMK

Document number: DS30939 Rev. 4 - 2

2 of 5

www.diodes.com

August 2012

© Diodes Incorporated

DMP2004DMK

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Drain Current (Note 5)

-550

mA

Pulsed Drain Current

-1.9

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

500

mW

Thermal Resistance, Junction to Ambient (Note 5)

250

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-20

⎯

⎯

V

Zero Gate Voltage Drain Current

IDSS

⎯

⎯

-1.0

μA

Gate-Source Leakage

⎯

⎯

±1.0

μA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-0.5

⎯

-1.0

V

Static Drain-Source On-Resistance

⎯

0.7

1.1

1.7

0.9

1.4

2.0

Ω

Forward Transfer Admittance

200

⎯

⎯

mS

Diode Forward Voltage (Note 6)

-0.5

⎯

-1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

⎯

175

pF

f = 1.0MHz

Output Capacitance

⎯

⎯

30

pF

Reverse Transfer Capacitance

⎯

⎯

20

pF

Notes:

5.

Device mounted on FR-4 PCB.

6.

Short duration pulse test used to minimize self-heating effect.