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DMN2004K Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN2004K
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2004K Datasheet(HTML) 3 Page - Diodes Incorporated

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DMN2004K
Document number: DS30938 Rev. 9 - 2
3 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004K
0
0
12
3
4
5
V
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
0.3
0.6
0.9
V
= 1.2V
GS
V
= 1.8V
GS
V
= 2.0V
GS
V
= 2.2V
GS
V
= 1.4V
GS
V
= 1.6V
GS
V
, GATE-SOURCE VOLTAGE (V)
Figure 2
GS
Reverse Drain Current vs. Source-Drain Voltage
100
0
1,000
200
300
400
500
600
700
800
900
0.4
0.8
1.2
1.6
2
V
= 10V
Pulsed
DS
T = 150 C
A
°
T = -55 C
A
°
T = 5 C
A
8
°
T = 25 C
A
°
T , CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage
vs. Channel Temperature
ch
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-75
-50
-25
025
50
75
100
125 150
V= 10V
I= 1mA
Pulsed
DS
D
0.1
I
DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance
vs. Drain Current
D,
1
0.2
0.4
0.6
0.8
1.0
V
= 10V
Pulsed
GS
T = 150 C
A
°
T = -55 C
A
°
T = -25 C
A
°
T = 0 C
A
°
T = 25 C
A
°
T = 125 C
A
°
T = 85 C
A
°
0.5
I , DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance
vs. Drain Current
D
0.1
1
V
= 5V
Pulsed
GS
T = 150 C
A
°
T = -55 C
A
°
T = -25 C
A
°
T = 0 C
A
°
T = 25 C
A
°
T = 125 C
A
°
T = 85 C
A
°
0.2
0.4
0.6
0.8
1.0
0.5
6
0.2
0.1
0
0.6
0.5
0.4
0.3
0.7
1.0
0.9
0.8
0
V
, GATE-SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
GS
4
2
T = 25°C
A
I = 540mA
D



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