DMP2004K

Document number: DS30933 Rev. 9 - 2

2 of 6

www.diodes.com

July 2014

© Diodes Incorporated

DMP2004K

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

-600

mA

Pulsed Drain Current

-1.9

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

550

mW

Thermal Resistance, Junction to Ambient (Note 5)

227

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-20

—

—

V

Zero Gate Voltage Drain Current

—

—

-1

Gate-Source Leakage

—

—

±1.0

µA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-0.5

—

-1.0

V

Static Drain-Source On-Resistance

—

0.7

0.9

Ω

—

1.1

1.4

—

1,7

2.0

Forward Transfer Admittance

200

—

—

mS

Diode Forward Voltage (Note 6)

-0.5

—

-1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

—

175

pF

f = 1.0MHz

Output Capacitance

—

—

30

pF

Reverse Transfer Capacitance

—

—

20

pF

Turn-On Delay Time

—

8.5

—

ns

Turn-On Rise Time

—

4.3

—

ns

Turn-Off Delay Time

—

20.2

—

ns

Turn-Off Fall Time

—

19.2

—

ns

Notes:

5. Device mounted on FR-4 PCB.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.