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ZDT1053 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZDT1053
Description  75V DUAL NPN HIGH GAIN MEDIUM POWER TRANSISTOR IN SM-8
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZDT1053 Datasheet(HTML) 2 Page - Diodes Incorporated

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ZDT1053
Document number: DS33206 Rev. 4 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated
ZDT1053
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
NPN
Unit
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
VCEO
75
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
5
A
Peak Pulse Current
ICM
20
A
Base Current
IB
500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector Power Dissipation
(Note 5)
PD
2.25
W
(Note 6)
2.75
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
55.6
°C/W
(Note 6)
45.5
Thermal Resistance, Junction to Leads
(Note 7)
RθJL
30.7
°C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device with any single die active and mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB;
device is measured under still air conditions whilst operating in steady-state.
6. Same as Note 5, except both die are active and equally sharing power.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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