KMB3D0P30SA_15 datasheet(2/4 Pages) KEC

2 / 4 page

2009. 8. 17

2/4

KMB3D0P30SA

Revision No : 2

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain to Source Breakdown Voltage

BVDSS

IDS=-250μ

A, VGS=0V,

-30

Drain Cut-off Current

IDSS

VGS=0V, VDS=-24V

-1

μA

VGS=0V, VDS=-24V, Tj=55℃

-10

Gate to Source Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Gate to Source Threshold Voltage

Vth

VDS=VGS, ID=250μ

-1.0

-3.0

Drain to SourceSource On Resistance

RDS(ON)

VGS=-10V, ID=-3A

(Note2)

Ω

VGS=-4.5V, ID=-2.5A

(Note2)

103

140

On State Drain Current

ID(ON)

VGS=-10V, VDS=-5V

(Note2)

-12

Forward Transconductance

gfs

VDS=-10V, ID=-3A

(Note2)

4.5

Dynamic

Input Capacitance

Ciss

VDS=-15V, VGS= 0V, f=1MHz,

365

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS=-15V, VGS=-10V, ID=-3A

(Note2)

6.3

Gate to Source Charge

Qgs

1.1

Gate to Drain Charge

Qgd

1.6

Turn-on Delay time

td(on)

VDD=-15V, VGS=-10V

ID=-1A, RG=6Ω

(Note2)

6.9

Turn-on Rise time

Turn-off Delay time

td(off)

Turn-off Fall time

Source-Drain Diode Ratings

Continuous Source Current

-3.0

Pulsed Source Current

ISP

(Note2)

-12

Source to Drain Forward Voltage

VSD

VGS=0V, IS=-1.25A

(Note2)

-1.2

Note2) Pulse Test : Pulse width <300

㎲ , Duty cycle < 2%

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