RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131023

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES

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RFHA1042

125W GaN Power Amplifier

225MHz to 450MHz

The RFHA1042 is optimized for military communications,

commercial wireless infrastructure and general purpose

applications in the 225MHz to 450MHz frequency band. Using an

advanced 48V high power density gallium nitride (GaN)

semiconductor process optimized for high peak to average ratio

applications, these high-performance amplifiers achieve 125W

power with high efficiency and flat gain over a broad frequency

range in a single amplifier design. The RFHA1042 is an input

matched GaN transistor packaged in an air cavity ceramic

package which provides excellent thermal stability. Ease of

integration is accomplished through the incorporation of simple,

optimized matching networks external to the package that provide

wideband gain, efficiency, and linearizable performance in a

single amplifier.

Functional Block Diagram

Ordering Information

RFHA1042S2

Sample bag with 2 pieces

RFHA1042SB

Bag with 5 pieces

RFHA1042SQ

Bag with 25 pieces

RFHA1042SR

Short reel with 50 pieces

RFHA1042TR13

13” Reel with 300 pieces

RFHA1042PCBA-410

Fully assembled evaluation board

Package: Flanged Ceramic, 2 pin,

RF400-2

Features

■

Advanced GaN HEMT Technology

■

Peak Power 125W Wideband

■

Single Circuit for 225MHz to

450MHz

■

48V Modulated Typical

Performance





Gain 18.5dB



Drain Efficiency 42%



ACP-26dBc

■

48V CW Typical Broadband

Performance





Gain 16dB



Drain Efficiency 60%

■

-40°C to 85°C Operating

Temperature

■

Optimized for Video Bandwidth

and Minimized Memory Effects

■

Large Signal Models Available

Applications

■

Military Communications

■

Commercial Wireless Infrastructure

■

General Purpose UHF Amplifiers

■

Public Mobile Radios

RFHA1042

RFHA1042