The RF Line

NPN Silicon

High-Frequency Transistor

. . . designed for wideband amplifier, driver or oscillator applications in military,

mobile, and aircraft radio.

• Specified 28 Volt, 400 MHz Characteristics —

Output Power = 1.0 Watt

Power Gain = 15 dB Min

Efficiency = 45% Typ

• Emitter Ballast and Low Current Density for Improved MTBF

• Common Emitter for Improved Stability

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

30

Vdc

Collector–Base Voltage

40

Vdc

Emitter–Base Voltage

3.0

Vdc

Collector Current — Continuous

150

mAdc

Derate above 25

°C

6.1

35

Watts

mW/

°C

Storage Temperature Range

–65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

28.5

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

30

—

—

Vdc

35

—

—

Vdc

35

—

—

Vdc

3.0

—

—

Vdc

—

—

1.0

mAdc

(continued)

MRF313

1.0 W, 400 MHz

HIGH–FREQUENCY

TRANSISTOR

NPN SILICON

CASE 305A–01, STYLE 1

Order this document

by MRF313/D

SEMICONDUCTOR TECHNICAL DATA

1