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ZXMP6A13G Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXMP6A13G
Description  60V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP6A13G Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXMP6A13G
Document Number DS32032 Rev. 6 - 2
4 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMP6A13G
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-0.5
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
-3.0
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 9)
RDS (ON)
0.390
Ω
VGS = -10V, ID = -0.9A
0.595
VGS = -4.5V, ID = -0.8A
Forward Transconductance (Notes 9 & 10)
gfs
1.8
S
VDS = -15V, ID = -0.9A
Diode Forward Voltage (Note 9)
VSD
-0.85
-0.95
V
IS = -0.8A, VGS = 0V, TJ = +25°C
Reverse Recovery Time (Note 10)
trr
21.1
ns
IS = -0.9A, di/dt = 100A/µs,
TJ = +25°C
Reverse Recovery Charge (Note 10)
Qrr
19.3
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
219
pF
VDS = -30V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
25.7
pF
Reverse Transfer Capacitance
Crss
20.5
pF
Total Gate Charge (Note 11)
Qg

2.9

nC
VGS = -4.5V
VDS = -30V
ID = -0.9A
Total Gate Charge (Note 11)
Qg
5.9
nC
VGS = -10V
Gate-Source Charge (Note 11)
Qgs
0.74
nC
Gate-Drain Charge (Note 11)
Qgd
1.5
nC
Turn-On Delay Time (Note 11)
tD(on)
1.6
ns
VDD = -30V, VGS = -10V
ID = -1A, RG  6.0Ω
Turn-On Rise Time (Note 11)
tr
2.2
ns
Turn-Off Delay Time (Note 11)
tD(off)
11.2
ns
Turn-Off Fall Time (Note 11)
tf
5.7
ns
Notes:
9. Measured under pulsed conditions. Pulse width
 300s; duty cycle  2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.



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