ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

2 of 8

www.diodes.com

July 2012

© Diodes Incorporated

ZXMP6A16DN8

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Value

Unit

Drain-Source voltage

-60

V

Gate-Source voltage

(Note 4)

±20

V

Continuous Drain current

(Notes 6 & 8)

-3.9

A

-3.1

(Notes 5 & 8)

-2.9

Pulsed Drain current

(Notes 7 & 8)

-18.3

A

Continuous Source current (Body diode)

(Notes 6 & 8)

-3.2

A

Pulsed Source current (Body diode)

(Notes 7 & 8)

-18.3

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power dissipation

Linear derating factor

(Notes 5 & 8)

1.25

10.0

W

mW/°C

(Notes 5 & 9)

1.81

14.5

(Notes 6 & 8)

2.15

17

Thermal Resistance, Junction to Ambient

(Notes 5 & 8)

100

°C/W

(Notes 5 & 9)

70

(Notes 6 & 8)

60

Thermal Resistance, Junction to Lead

(Notes 8 & 10)

48.85

Operating and storage temperature range

-55 to 150

°C

Notes:

5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

6. Same as note (5), except the device is measured at t

≤ 10 sec.

7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.

8. For a dual device with one active die.

9. For a device with two active die running at equal power.

10. Thermal resistance from junction to solder-point.