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RFHA3832 Datasheet(PDF) 1 Page - RF Micro Devices

Part # RFHA3832
Description  10W GaN Wide-Band Power Amplifier
PDF  11 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFHA3832 Datasheet(HTML) 1 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131205
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES
® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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PRELIMINARY
RFHA3832
10W GaN Wide-Band Power Amplifier
The RFHA3832 is a wideband Power Amplifier designed for CW and pulsed
applications such as wireless infrastructure, RADAR, two way radios and
general purpose amplification. Using an advanced high power density
Gallium Nitride (GaN) semiconductor process, these high-performance
amplifiers achieve high efficiency, flat gain, and large instantaneous
bandwidth in a single amplifier design. The RFHA3832 is an input matched
GaN transistor packaged in an air cavity ceramic package which provides
excellent thermal stability through the use of advanced heat sink and power
dissipation technologies. Ease of integration is accomplished through the
incorporation of optimized input matching network within the package that
provides wideband gain and power performance in a single amplifier. An
external output match offers the flexibility of further optimizing power and
efficiency for any sub-band within the overall bandwidth.
Functional Block Diagram
Ordering Information
RFHA3832S2
Sample bag with 2 pieces
RFHA3832SB
Bag with 5 pieces
RFHA3832SQ
Bag with 25 pieces
RFHA3832SR
Short reel with 100 pieces
RFHA3832TR7
7” reel with 500 pieces
RFHA3832TR13
13” reel with 2500 pieces
RFHA3832PCBA-410
Fully assembled evaluation board
30 to 1000 MHz, 48V operation
Package: AIN Leadless Chip
Carrier, SO8
Features
■
Advanced GaN HEMT Technology
■
Output Power of 10W
■
Advanced Heat-Sink Technology
■
30MHz to 1000MHz Instantaneous
Bandwidth
■
Input Internally Matched to 50
Ω
■
48V Operation Typical
Performance
Output Power 40dBm
Gain 15.5dB
Power Added Efficiency 48%
■
-40°C to 85°C Operating
Temperature
■
Large Signal Models Available
Applications
■
Class AB Operation for Public
Mobile Radio
■
Power Amplifier Stage for
Commercial Wireless Infrastructure
■
General Purpose Tx Amplification
■
Test Instrumentation
■
Civilian and Military Radar
RFHA3832


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