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SGC4486Z Datasheet(PDF) 2 Page - RF Micro Devices

Part # SGC4486Z
Description  50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
PDF  6 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGC4486Z Datasheet(HTML) 2 Page - RF Micro Devices

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DS100813
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGC4486Z
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)
Typical Performance with Bias Tee, VD=3V, ID=52mA
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)110
mA
Device Voltage (VCE)4
V
RF Input Power* (See Note)
12
dBm
Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Storage Temp
+150
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL=50Ω
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain (G)
dB
23.5
22.5
20.5
14.5
12.3
9.5
Output Third Order Intercept Point (OIP3)
dBm
30.5
29.5
29.0
27.5
26.5
23.5
Output Power at 1dB Compression (P1dB)
dBm
16.1
14.4
13.8
12.7
12.4
10.6
Input Return Loss (IRL)
dB
24.0
15.5
16.5
14.5
14.5
13.0
Output Return Loss (ORL)
dB
25.0
17.0
16.5
11.5
12.0
11.0
Reverse Isolation (S12)
dB
25.0
26.0
25.0
20.5
19.0
17.5
Noise Figure (NF)
dB
2.8
2.8
3.1
3.4
3.9
4.8
Test Conditions: VD=3V ID=52mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm
TL=25°C ZS=ZL=50Ω
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
20
22
24
26
28
30
32
34
36
00.5
11.5
22.5
3
3.5
Frequency (GHz)
25C
-40C
85C
P1dB vs. Frequency
9
11
13
15
17
19
21
00.5
11.522.5
33.5
Frequency (GHz)
25C
-40C
85C



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