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IRF7811AVPBF-1 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7811AVPBF-1 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 6 page  IRF7811AVPbF-1 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss
Typical values of RDS(on) measured at V GS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A. Rθ is measured at TJ approximately 90°C Electrical Characteristics Parameter Symbol Min Typ Max Units Drain-to-Source Breakdown Voltage V(BR)DSS 30 ––– ––– V Static Drain-to-Source On-Resistance RDS(on) ––– 11 14 m Ω Gate Threshold Voltage VGS(th) 1.0 ––– 3.0 V ––– ––– 50 μA ––– ––– 20 μA ––– ––– 100 mA Gate-to-Source Leakage Current IGSS ––– ––– ±100 nA Total Gate Charge, Control FET Qg ––– 17 26 nC Total Gate Charge, Synch FET Qg ––– 14 21 VGS = 5.0V, VDS < 100mV Pre-Vth Gate-to-Source Charge Qgs1 ––– 3.4 ––– Post-Vth Gate-to-Source Charge Qgs2 ––– 1.6 ––– Gate-to-Drain ("Miller") Charge Qgd ––– 5.1 ––– Switch Charge (Qgs2 + Qgd)QSW ––– 6.7 ––– Output Charge QOSS ––– 8.1 12 VDS = 16V, VGS = 0 Gate Resistance RG 0.5 ––– 4.4 Ω Turn-On Delay Time td(on) ––– 8.6 ––– ns Rise Time tr ––– 21 ––– Turn-Off Delay Time td(off) ––– 43 ––– Fall Time tf ––– 10 ––– Input Capacitance Ciss ––– 1801 ––– pF Output Capacitance Coss ––– 723 ––– Reverse Transfer Capacitance Crss ––– 46 ––– Diode Characteristics Parameter Symbol Min Typ Max Units Diode Forward Voltage VSD ––– ––– 1.3 V Reverse Recovery Charge (with Parallel Schottsky) f VDS = VGS, ID = 250μA VDS = 30V, VGS = 0V VGS = ± 20V VDS = 24V, ID = 15A, VGS = 5.0V VDS = 24V, VGS = 0V Conditions VGS = 0V, ID = 250μA VGS = 4.5V, ID = 15A d di/dt = 700A/μs , (with 10BQ040) VDD = 16V, VGS = 0V, ID = 15A VGS = 5.0V VDD = 16V ID = 15A Clamped Inductive Load di/dt = 700A/μs VDD = 16V, VGS = 0V, ID = 15A TJ = 25°C, IS = 15A d ,VGS = 0V VDS = 24V, VGS = 0V, TJ = 100°C VGS = 0V VDS = 10V Conditions Drain-to-Source Leakage Current IDSS VDS = 16V, ID = 15A Qrr ––– 43 ––– nC nC ––– 50 ––– Qrr Reverse Recovery Charge f |
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