GaAs SPDT Reflective Switch, DC - 3

GHz with TTL/CMOS Control Input

CR-9

V 3.00

Features

n

Integral TTL Driver

n

Ultra Low Power Consumption

n

Fast Switching Speed: 7 ns Typical

n

Surface Mount Package

n

50 Ohm Nominal Impedance

n

MIL-STD-883 Screening Available

Description

M/A-COM’s SW-312 is a GaAs FET SPDT reflective

switch with integral silicon ASIC driver. Packaged in a

16-lead ceramic surface mount package, this device

offers excellent performance and repeatability from DC

to 3 GHz while maintaining low power consumption.

The SW-312 is ideally suited for use where fast speed,

low power consumption and broadband applications are

required. MIL-STD-883 screening available.

Electrical Specifications

1,2

(From –55°C to +85°C)

Parameter

Test Conditions

Frequency

Units

Min

Typ

Max

Insertion Loss

—

DC - 3000 MHz

DC - 2000 MHz

DC - 1000 MHz

DC - 500 MHz

dB

dB

dB

dB

—

—

—

—

—

—

—

—

1.2

1.1

0.9

0.8

VSWR

—

DC - 3000 MHz

DC - 2000 MHz

DC - 1000 MHz

DC - 500 MHz

Ratio

Ratio

Ratio

Ratio

—

—

—

—

—

—

—

—

1.5:1

1.4:1

1.4:1

1.3:1

Isolation

—

DC - 3000 MHz

DC - 2000 MHz

DC - 1000 MHz

DC - 500 MHz

dB

dB

dB

dB

30

35

40

45

—

—

—

—

—

—

—

—

Trise, Tfall

10% to 90%

—

ns

—

7

—

Ton, Toff

1.3V CTL to 90% / 10%

—

ns

—

18

—

Transients

In-Band

—

mV

—

25

—

1 dB Compression

Input Power

0.05 GHz

0.5 GHz to 3 GHz

dBm

dBm

—

—

+25

+30

—

—

IP2

Two-Tone Input Power up to +5 dBm

0.05 GHz

0.5 GHz to 3 GHz

dBm

dBm

—

—

+60

+65

—

—

IP3

Two-Tone Input Power up to +5 dBm

0.05 GHz

0.5 GHz to 3 GHz

dBm

dBm

—

—

+40

+46

—

—

Vin Low

0V to 0.8V

—

µA

—

—

1

Vin High

2.0V to 5.0V

—

µA

—

—

1

1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.

2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.