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P4C1681-35JM Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation

Part # P4C1681-35JM
Description  ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
PDF  10 Pages
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1681-35JM Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation

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P4C1681, P4C1682
Page 5 of 10
Document # SRAM109 REV A
-12
-15
-20
-25
-35
Min Max Min Max Min Max Min
Max Min Max
t
WC
Write Cycle Time
12
15
18
20
30
ns
t
CW
Chip Enable Time
12
15
18
20
25
ns
to End of Write
t
AW
Address Valid to
12
15
18
20
25
ns
End of Write
t
AS
Address Set-up
0
0
0
0
0
ns
Time
t
WP
Write Pulse Width
12
15
18
20
25
ns
t
AH
Address Hold
0
0
0
0
0
ns
Time
t
DW
Data Valid to
7
8
10
10
15
ns
End of Write
t
DH
Data Hold Time
0
0
0
0
0
ns
t
WZ
Write Enable to
4
5
7
7
13
ns
Output in High Z†
t
OW
Output Active to
0
0
0
0
0
ns
End of Write
t
AWE
Write Enable to
12
15
20
25
30
ns
Data-out Valid£
t
ADV
Data-in Valid to
12
15
20
25
30
ns
Data-out Valid
† P4C1682 only.
£ P4C1681 only.
AC ELECTRICAL CHARACTERISTICS—WRITE CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
12. Write Cycle Time is measured from the last valid address to the
first transitioning address.
10. CE and WE must be LOW for WRITE cycle.
11. If CE goes HIGH simultaneously with WE HIGH, the output
remains in a high impedance state.
Symbol
Parameter
Unit
WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE controlled)(10)
Notes:



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