BCW68GL datasheet(2/5 Pages) ONSEMI

2 / 5 page

BCW68GL

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−45

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, VEB = 0)

V(BR)CES

−60

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector Cutoff Current

(VCE= −45 Vdc, IE = 0)

(VCE= −45 Vdc, IB = 0, TA = 150°C)

ICES

−

−20

−10

nAdc

mAdc

Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0)

IEBO

−

−20

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

(IC = −300 mAdc, VCE = −1.0 Vdc)

hFE

120

160

−

400

−

Collector−Emitter Saturation Voltage

(IC = −500 mAdc, IB = −50 mAdc)

VCE(sat)

−

−0.7

Vdc

Base−Emitter Saturation Voltage

(IC = −500 mAdc, IB = −50 mAdc)

VBE(sat)

−

−2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)

100

−

MHz

Output Capacitance

(VCB= −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

Input Capacitance

(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

105

Noise Figure

(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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