PEMB30_PUMB30_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 2 September 2009

3 of 10

NXP Semiconductors

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors; R1 = 2.2 k

Ω, R2 = open

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

collector-base voltage

open emitter

-

−50

V

collector-emitter voltage

open base

-

−50

V

emitter-base voltage

open collector

-

−5V

output current

-

−100

mA

peak collector current

single pulse;

-

−100

mA

total power dissipation

SOT363

[1] -

200

mW

SOT666

[1][2] -

200

mW

Per device

total power dissipation

SOT363

[1] -

300

mW

SOT666

[1][2] -

300

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

thermal resistance from

junction to ambient

in free air

SOT363

[1] -

-

625

K/W

SOT666

[1][2] -

-

625

K/W

Per device

thermal resistance from

junction to ambient

in free air

SOT363

[1] -

-

416

K/W

SOT666

[1][2] -

-

416

K/W