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IRFS7762PBF Datasheet(PDF) 3 Page - International Rectifier |
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IRFS7762PBF Datasheet(HTML) 3 Page - International Rectifier |
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3 / 12 page  IRFS/SL7762PbF 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 180 ––– ––– S VDS = 10V, ID = 51A Qg Total Gate Charge ––– 85 130 ID = 51A Qgs Gate-to-Source Charge ––– 21 ––– VDS = 38V Qgd Gate-to-Drain Charge ––– 26 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg – Qgd) ––– 60 ––– td(on) Turn-On Delay Time ––– 11 ––– ns VDD = 38V tr Rise Time ––– 49 ––– ID = 51A td(off) Turn-Off Delay Time ––– 57 ––– RG= 2.7 tf Fall Time ––– 40 ––– VGS = 10V Ciss Input Capacitance ––– 4440 ––– pF VGS = 0V Coss Output Capacitance ––– 370 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 330 ––– VGS = 0V, VDS = 0V to 60V Coss eff.(TR) Output Capacitance (Time Related) ––– 430 ––– VGS = 0V, VDS = 0V to 60V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 85 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 335 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 51A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 13 ––– V/ns TJ = 175°C,IS = 51A,VDS = 75V trr Reverse Recovery Time ––– 34 ––– ns TJ = 25°C VDD = 64V ––– 46 ––– TJ = 125°C IF = 51A, Qrr Reverse Recovery Charge ––– 54 ––– nC TJ = 25°C di/dt = 100A/µs ––– 69 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.7 ––– A TJ = 25°C nC D S G |
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