IRGS4607DPBF datasheet(3/16 Pages) IRF

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IRGR/S/B4607DPbF

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November 14, 2014

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max

Units

Conditions

Total Gate Charge

—

9.0

—

IC = 4.0A

Qge

Gate-to-Emitter Charge

—

3.0

—

VGE = 15V

Qgc

Gate-to-Collector Charge

—

4.0

—

VCC = 300V

Eon

Turn-On Switching Loss

—

140

—

µJ IC = 4.0A, VCC = 400V, VGE = 15V

RG = 100, TJ = 25°C

Energy losses include tail & diode

reverse recovery 

Eoff

Turn-Off Switching Loss

—

Etotal

Total Switching Loss

—

202

—

td(on)

Turn-On delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

120

—

Fall time

—

Eon

Turn-On Switching Loss

—

220

—

µJ

IC = 4.0A, VCC = 400V, VGE = 15V

RG = 100, TJ = 175°C

Energy losses include tail & diode

reverse recovery 

Eoff

Turn-Off Switching Loss

—

Etotal

Total Switching Loss

—

312

—

td(on)

Turn-On delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

Fall time

—

Cies

Input Capacitance

—

250

—

VGE = 0V

Coes

Output Capacitance

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

7.1

—

f = 1.0Mhz

RBSOA

Reverse Bias Safe Operating Area

TJ = 175°C, IC = 16A

FULL SQUARE

VCC = 480V, Vp ≤ 600V

VGE = +20V to 0V

SCSOA

Short Circuit Safe Operating Area

—

µs

VCC = 400V, Vp ≤ 600V

VGE = +15V to 0V

Erec

Reverse Recovery Energy of the Diode

—

7.4

—

µJ

TJ = 175°C

trr

Diode Reverse Recovery Time

—

VCC = 400V, IF = 4.0A

Irr

Peak Reverse Recovery Current

—

5.1

—

VGE = 15V, Rg = 100

Notes:



VCC = 80% (VCES), VGE = 20V.



R is measured at TJ of approximately 90°C.



Refer to AN-1086 for guidelines for measuring V(BR)CES safely.



Pulse width limited by max. junction temperature.



Values influenced by parasitic L and C in measurement.



When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

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