2

Electrical Specifications

2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications.

3. This final package part performance is verified by a functional test correlated to actual performance at one or

more frequencies.

4. Specifications are derived from measurements in a 50 W test environment. Aspects of the amplifier performance

may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise

(Гopt) matching.

Table 1. RF Electrical Characteristics

Parameter

Min

Typ.

Max

Sigma

Unit

Small-signal Gain, Ga

22

0.5

dB

Noise Figure into 50 Ω, NF

2.5

0.2

dB

Output Power at 1dB Gain Compression, P-1dB

+10

0.8

dBm

Third Order Intercept Point;

∆f=100MHz; Pin=-20dBm, OIP3

+20

1.1

dBm

Input Return Loss, RLin

-12

0.3

dB

Output Return Loss, Rlout

-16

0.7

dB

Reverse Isolation, Isol

-45

0.5

dB

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description

Specifications

Unit

Comments

Min.

Typical

Max.

Drain Supply Current, Id

55

70

mA

(Vd = 3 V, Under any RF power drive and

temperature)

Table 3. Thermal Properties

Parameter

Test Conditions

Value

Thermal Resistance,

qch-b

qch-b = 27 °C/W

Absolute Minimum and Maximum Ratings

Table 4. Minimum and Maximum Ratings

Specifications

Description

Pin

Min.

Max.

Unit

Comments

Drain Supply Voltage

Vd

7

V

Drain Current

Id

100

mA

RF Input Power (Pin)

RFIN

15

dBm

CW

Channel Temperature

+150

°C

Storage Temperature

-65

+150

°C

Maximum Assembly Temperature

+300

°C

60 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.