2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6530 published specifications.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may

be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)

matching.

5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.

TA=25°C, Zo=50 Ω, Vg=1V, IF=1GHz

Parameter

Down Conversion

Up Conversion

Down Conversion

Unit

Notes

LO Port Pumping Power, PLO

>10

>0

>10

dBm

RF to IF conversion Gain, CG

-10

-15

-8

dB

RF Port Return loss, RL_RF

5

5

10

dB

LO Port Return loss, RL_LO

10

10

5

dB

IF Port Return loss, RL_IF

10

10

10

dB

Image Rejection Ratio, IR

15

15

15

dB

LO to RF Port Isolation, LO-RF Iso.

22

25

22

dB

LO to IF Port Isolation, LO-IF Iso.

25

25

25

dB

RF to IF Port Isolation, RF-IF Iso.

15

15

15

dB

Input IP3, Fdelta=100 MHz, IIP3

Prf = -10 dBm, Plo = 10 dBm

18

-

10

dBm

Input Port Power at 1dB gain, P-1

compression point, Plo=+10 dBm

8

-

0

dBm

Noise Figure, NF

10

-

12

dB

Gate Pumped

Drain Pumped

FF Frequency Range, FRF

5-30

5-30

GHz

LO Frequency Range, FLO

5-30

5-30

GHz

IF Frequency Range, FIF

DC-5

DC-5

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency 1.0– 2.0 GHz.

3. 100% on-package test is done at RF frequency = 21 GHz, LO frequency = 23 GHz (IF frequency = 2 GHz)

4. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Parameter

Min.

Typical

Max.

Unit

Notes

Gate Supply Current, Ig

0

mA

Under any RF power drive and temperature

Gate Supply Operating Voltage, Vg

-1V

V

Min Ambient Operating Voltage, Tmins

-55

°C

Max Ambient Operating Voltage, Tmax

+125

°C

Conversion Gain, CG

-12.5

-8

dB

Image Rejection Ratio, IR

20

dB

Absolute Minimum and Maximum Ratings

Table 3. Minimum and Maximum Ratings

Description

Min.

Max.

Unit

Notes

Gate Voltage Supply, Vg

0

-3

V

RF CW Input Power, Pin

25

dBm

Operating Channel Temperature, Tch

+150

dB

Storage Temperature, Tstg

-65

+150

°C

Maximum Assembly Temperature, Tmax

260

°C

20 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.