2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance

may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise

(Гopt) matching.

5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.

Table 1. RF Electrical Characteristics

TA=25°C, Vd=3.0V, Vg=-1V,Idq=83mA Zo=50 Ω, LO=+15dBm, IF=2GHz

Parameter

RF=22GHz, LO=24GHz

RF=30GHz, LO=32GHz

Unit

Comment

Min

Typ

Max

Min

Typ

Max

Noise Figure into 50 Ω, NF

3

4.5

3

4.5

dB

Conversion Gain, CG

10

13

10

13

dB

Input Third Order Intercept, IIP3

-5

-4

-5

-4

dBm

Image Rejection, Sup

15

15

dB

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description

Min.

Typical

Max.

Unit

Comments

Drain Supply Current, Id

60

90

mA

Vd = 4.0 V

Drain Supply Voltage, Vd

3

5

V

Gate Supply Voltage, Vg

-1.0

V

Ig = 0.1mA

RF Frequency, RFfreq

20

32

GHz

LO Frequency, LOfreq

18

34

GHz

IF Frequency, IFfreq

1

3.5

GHz

LO Drive Power, LO

+10

+15

+22

dBm