Absolute

Symbol

Parameter

Units

Maximum

V

DS

V

7

V

GS

V

‑7 to 1

V

GD

V

‑7 to 1

I

DS

mA

300

I

GS

Gate Current

mA

20

P

diss

W

1

P

in max.

RF Input Power

dBm

+24

T

CH

Channel Temperature

°C

150

T

STG

Storage Temperature

°C

‑65 to 150

θ

ch_b

°C/W

63

Notes:

1. Operation of this device in excess of any one

of these parameters may cause permanent

damage.

2. Assumes DC quiescent conditions.

3. Board (package belly) temperatureT

Derate 16 mW/°C for T

4. Thermal resistance measured using

150°C Liquid Crystal Measurement meth‑

od.

5. Device can safely handle +24 dBm RF Input

Power provided IGS is limited to 20mA. IGS

at P1dB drive level is bias circuit depen‑

dent.

NF (dB)

Figure 2. NF

Nominal = 0.6, USL = 1.0.

0

0.6

0.3

0.9

1.2

180

150

120

90

60

30

0

Cpk = 1.0

Stdev = 0.14

+3 Std

-3 Std

OIP3 (dBm)

Figure 3. OIP3

LSL = 35.5, Nominal = 38.1.

35

38

36

37

40

39

41

160

120

80

40

0

Cpk = 1.2

Stdev = 0.71

+3 Std

-3 Std

GAIN (dB)

Figure 4. Small Signal Gain

LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.

18.5

19.5

20.5

21.5

300

250

200

150

100

50

0

Cpk = 2.0

Stdev = 0.21

+3 Std

-3 Std

Notes:

5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots. Future wafers allocated to this product may

have nominal values anywhere between the upper and lower limits.

6. Measurements are made on production test board, which represents a trade‑off between optimal OIP3, NF and VSWR. Circuit losses have

been de‑embedded from actual measurements.

Figure 1. Typical I-V Curves

(Vgs = 0.1 per step).

400

300

200

100

0

0

2

4

5

6

7

3

1

0.9 V

0.8 V

0.7 V

0.5 V

0.6 V

P1dB (dBm)

Figure 5. P1dB

Nominal = 24.6.

24.2

24.8

24.4

24.6

25

25.2

240

200

160

120

80

40

0

Stdev = 0.12

+3 Std

-3 Std