Absolute

Symbol

Parameter

Units

Maximum

V

DS

V7

V

GS

V

-5 to 0.8

V

GD

V

-5 to 1

I

DS

A1

I

GS

Gate Current

mA

12

P

diss

W

2.25

P

in

RF Input Power

dBm

30

T

CH

Channel Temperature

°C

150

T

STG

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Assumes DC quiescent conditions.

Derate 35 mW/

4. Channel-to-board thermal resistance

measured using 150

°C Liquid Crystal

Measurement method.

ATF-50189 Electrical Specifications

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Vgs

Operational Gate Voltage

Vds = 4.5V, Ids = 280 mA

V

0.37

0.53

0.72

Vth

Threshold Voltage

Vds = 4.5V, Ids = 32 mA

V

—

0.38

—

Idss

Saturated Drain Current

Vds = 4.5V, Vgs = 0V

μA

—

4.1

—

Gm

Transconductance

Vds = 4.5V, Gm =

ΔIds/ΔVgs;

mmho

175

2294

—

ΔVgs = Vgs1 – Vgs2

Vgs1 = 0.55V, Vgs2 = 0.5V

Igss

Gate Leakage Current

Vds = 0V, Vgs = -4.5V

μA

—

13.8

60

NF

f = 2 GHz

dB

—

1.1

—

f = 900 MHz

dB

—

1.0

—

G

f = 2 GHz

dB

14

15.5

17

f = 900 MHz

dB

—

21.5

—

OIP3

f = 2 GHz

dBm

43

45

—

f = 900 MHz

dBm

—

44

—

P1dB

f = 2 GHz

dBm

27

29

—

f = 900 MHz

dBm

—

28.5

—

PAE

f = 2 GHz

%

45

62

—

f = 900 MHz

%

—

49

—

ACLR

Adjacent Channel Leakage

Offset BW = 5 MHz

dBc

—

60.0

—

Offset BW = 10 MHz

dBc

—

67.8

—

Notes:

1. Measurements at 2 GHz obtained using production test board described in Figure 1 while measurement at 900 MHz obtained from double stub tuners.

2. i ) 2 GHz OIP3 test condition: F1 = 2 GHz, F2 = 2.005 GHz and Pin = -5 dBm per tone.

ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -5 dBm per tone.

3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)

- Test Model 1

- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)

- Freq = 2140 MHz

- Pin = -5 dBm

- Channel Integrate Bandwidth = 3.84 MHz