2SC2334_15 datasheet(2/4 Pages) JMNIC

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Product Specification

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JMnic

Silicon NPN Power Transistor

2SC2334

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 5.0A ; IB= 0.5A, L=1mH

100

VCEX(SUS)-1

Collector-Emitter Sustaining Voltage

IC= 5.0A ; IB1=-IB2= 0.5A,

VBE(off)=5.0V, L=180μH,clamped

100

VCEX(SUS)-2

Collector-Emitter Sustaining Voltage

IC= 10A ; IB1= 1.0A; IB2= -0.5A,

VBE(off)= -5.0V, L= 180μH,clamped

100

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5.0A; IB= 0.5A

0.6

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5.0A; IB= 0.5A

1.5

ICBO

Collector Cutoff Current

VCB= 100V ; IE= 0

μA

ICER

Collector Cutoff Current

VCE= 100V ; RBE= 51Ω,Ta=125℃

1.0

ICEX

Collector Cutoff Current

VCE= 100V; VBE(off)= -1.5V

VCE= 100V; VBE(off)= -1.5V,Ta=125℃

1.0

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

μA

hFE-1

DC Current Gain

IC= 0.5A ; VCE= 5V

200

hFE-2

DC Current Gain

IC= 3.0A ; VCE= 5V

140

hFE-3

DC Current Gain

IC= 5.0A ; VCE= 5V

Switching times

ton

Turn-on Time

0.5

μs

tstg

Storage Time

1.5

μs

Fall Time

IC= 5.0A ,RL= 10Ω,

IB1= -IB2= 0.5A,VCC≈ 50V

0.5

μs

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