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IRLR8103VPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLR8103VPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  DEVICE CHARACTERISTICS 12/0604 D-Pak IRLR8103VPbF www.irf.com 1 S D G PD - 95093A IRLR8103V RDS(on) 7.9 m Ω QG 27 nC QSW 12 nC QOSS 29nC Absolute Maximum Ratings Symbol Units VDS VGS Continuous Drain or Source Current TC = 25°C (VGS > 10V) TC= 90°C IDM TC = 25°C TC = 90°C TJ , TSTG °C IS ISM Thermal Resistance Symbol Typ. Max. Units RθJA ––– 50 RθJC ––– 1.09 °C/W A V A ID PD W IRLR8103V 91 363 30 ±20 63 91 363 115 -55 to 150 60 Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃÃ Parameter Maximum Junction-to-Ambient eh Maximum Junction-to-Case h Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications • 100% R G Tested • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC- DC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including R DS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Q sw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. |
Similar Part No. - IRLR8103VPBF_15 |
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Similar Description - IRLR8103VPBF_15 |
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