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MAX791C/D Datasheet(PDF) 15 Page - Maxim Integrated Products |
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MAX791C/D Datasheet(HTML) 15 Page - Maxim Integrated Products |
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15 / 20 page ![]() Using SuperCaps or MaxCaps with the MAX791 VBATT has the same operating voltage range as VCC, and the battery-switchover threshold voltages are typi- cally ±30mV centered at VBATT, allowing use of a SuperCap and a simple charging circuit as a backup source (Figure 12). If VCC is above the reset threshold and VBATT is 0.5V above VCC, current flows to VOUT and VCC from VBATT until the voltage at VBATT is less than 0.5V above VCC. For example, with a SuperCap connected to VBATT and through a diode to VCC, if VCC quickly changes from 5.4V to 4.9V, the capacitor discharges through VOUT and VCC until VBATT reaches 5.3V typical. Leakage current through the SuperCap charging diode and MAX791 internal power diode eventually dis- charges the SuperCap to VCC. Also, if VCC and VBATT start from 0.5V above the reset threshold and power is lost at VCC, the SuperCap on VBATT discharges through VCC until VBATT reaches the reset threshold; the MAX791 then switches to battery-backup mode and the current through VCC goes to zero (Figure 10). Using Separate Power Supplies for VBATT and VCC If using separate power supplies for VCC and VBATT, VBATT must be less than 0.3V above VCC when VCC is above the reset threshold. As described in the previous section, if VBATT exceeds this limit and power is lost at VCC, current flows continuously from VBATT to VCC via the VBATT-to-VOUT diode and the VOUT-to-VCC switch until the circuit is broken (Figure 10). Alternative Chip-Enable Gating Using memory devices with CE and CE inputs allows the MAX791 CE loop to be bypassed. To do this, con- nect CE IN to ground, pull up CE OUT to VOUT, and connect CE OUT to the CE input of each memory device (Figure 13). The CE input of each part then con- nects directly to the chip-select logic, which does not have to be gated by the MAX791. Adding Hysteresis to the Power-Fail Comparator Hysteresis adds a noise margin to the power-fail com- parator and prevents repeated triggering of PFO when VIN is near the power-fail comparator trip point. Figure 14 shows how to add hysteresis to the power-fail com- parator. Select the ratio of R1 and R2 such that PFI sees 1.25V when VIN falls to the desired trip point (VTRIP). Resistor R3 adds hysteresis. It will typically be an order of magnitude greater than R1 or R2. The cur- rent through R1 and R2 should be at least 1µA to ensure that the 25nA (max) PFI input current does not shift the trip point. R3 should be larger than 10k Ω to prevent it from loading down the PFO pin. Capacitor C1 adds additional noise rejection. Microprocessor Supervisory Circuit ______________________________________________________________________________________ 15 MAX791 VCC GND PFI *OPTIONAL R2 R3 R1 VIN +5V C1* TO µP PFO VTRIP = 1.25 R1 + R2 R2 VH = 1.25 / R2 || R3 VL - 1.25 + 5 - 1.25 = 1.25 R1 + R2 || R3 R1 R3 R2 PFO +5V 0V 0V VH VTRIP VIN VL Figure 14. Adding Hysteresis to the Power-Fail Comparator |
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