BFT25A_15 datasheet(2/14 Pages) JMNIC

2 / 14 page

9397 750 13399

Product data sheet

Rev. 04 — 6 July 2004

2 of 14

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

Pinning information

Ordering information

Marking

[1]

* = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W : Made in China.

Limiting values

[1]

Ts is the temperature at the soldering point of the collector tab.

Table 2:

Discrete pinning

Description

Simpliﬁed outline

Symbol

Code: V10

base

emitter

collector

SOT23

sym021

Table 3:

Ordering information

Type number

Package

Name

Description

Version

BFT25A

plastic surface mounted package; 3 leads

SOT23

Table 4:

Marking

Type number

Marking code [1]

BFT25A

34*

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

VCEO

collector-emitter voltage

open base

VEBO

emitter-base voltage

open collector

DC collector current

6.5

Ptot

total power dissipation

up to Ts = 165 °C

[1] -32

Tstg

storage temperature

−65

+150

°C

junction temperature

175

°C

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