2SB1386G-X-AB3-R datasheet(2/5 Pages) UTC

2 / 5 page

2SB1386

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

www.unisonic.com.tw

QW-R208-019.D



ABSOLUTE MAXIMUM RATINGS ( TA=25C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-30

Collector-Emitter Voltage

VCEO

-20

Emitter-Base Voltage

VEBO

-6

Collector Current (DC)

IC(DC)

-5

Collector Current (Pulse) (Note2)

IC(PULSE)

-10

Collector Power Dissipation

0.5

Junction Temperature

150

C

Storage Temperature

TSTG

-55 ~ +150

C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Single pulse, PW=10ms



ELECTRICAL CHARACTERISTICS ( TA=25C, unless otherwise specified )

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

BVCBO

IC= -50μA

-30

Collector Emitter Breakdown Voltage

BVCEO

IC= -1mA

-20

Emitter Base Breakdown Voltage

BVEBO

IE= -50μA

-6

Collector-Emitter Saturation Voltage

VCE(SAT)

IC/IB= -4A/-0.1A

-1.0

Collector Cut-off Current

ICBO

VCB= -20V

-0.5

μA

Emitter Cut-off Current

IEBO

VEB= -5V

-0.5

μA

DC Current Gain

hFE

VCE= -2V, IC= -0.5A

390

Transition Frequency

VCE= -6V, IE= 50mA, f=30MHz

120

MHz

Output Capacitance

Cob

VCB= -20V, IE= 0A, f=1MHz



CLASSIFICATION OF hFE

RANK

RANGE

82-180

120-270

180-390

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