2SB1202L-X-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

2SB1202

PNP PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R217-005.E

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-6

TO-126C

TO-251

Collector Power Dissipation

Tc=25

°C

TO-252

-3

Collector Current

PULSE

ICP

-6

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-126C

6.25

TO-251

4.53

Junction to Case

TO-252

θJC

4.53

°C/W

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

C-B Breakdown Voltage

BVCBO

IC=-10μA, IE=0

-60

C-E Breakdown Voltage

BVCEO

IC=-1mA, RBE=∞

-50

E-B Breakdown Voltage

BVEBO

IE=-10μA, IC=0

-6

Collector Cutoff Current

ICBO

VCB=-40V,IE=0

-1

μA

Emitter Cutoff Current

IEBO

VEB=-4V,IC=0

-1

μA

C-E Saturation Voltage

VCE(SAT)

IC=-2A, IB=-100mA

-0.35

-0.7

B-E Saturation Voltage

VBE(SAT)

IC=-2A, IB=-100mA

-0.94

-1.2

hFE1

VCE=-2V, Ic=-100mA

100

560

DC Current Gain

hFE2

VCE=-2V, Ic=-3A

Gain-Bandwidth Product

VCE=-10V, IC=-50mA

150

MHz

Output Capacitance

Cob

VCB=-10V, f=1MHz

Turn-on Time

tON

See test circuit

Storage Time

tSTG

See test circuit

450

Fall Time

See test circuit

CLASSIFICATION OF hFE1

RANK

RANGE

100-200

140-280

200-400

280-560

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