2SD880G-AB3-R datasheet(2/4 Pages) UTC

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2SD880

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-013.G



ABSOLUTE MAXIMUM RATINGS (T

A =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Current

Base Current

0.5

Power Dissipation

SOT-89

TA=25

0.55

TO-220

1.5

SOT-89

TC=25

TO-220

Junction Temperature

150

Storage Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Breakdown Voltage

BVCEO

IC=50mA, IE=0

Collector Cut-Off Current

ICBO

VCB=60V, IE=0

100

µA

Emitter Cut-Off Current

IEBO

VEB=7V, IC=0

100

µA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=3A, IB=300mA

Base-Emitter Saturation Voltage

VBE(ON)

VCE=5V, IC=500mA

DC Current Gain

hFE

IC=500mA, VCE=5V

100

200

Current gain bandwidth product

VCE=5V, IC=500mA

MHZ

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