2SD313

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-001.F



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

5

V

Collector Current

3

A

Collector Dissipation

TO-220

1.75

W

TO-220F

1.6

TO-263

1.73

Junction Temperature

+150

C

Storage Temperature

-55 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

60

V

Collector-Emitter Breakdown Voltage

60

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-Off Current

0.1

mA

Emitter Cut-Off Current

1.0

mA

DC Current Gain

40

320

40

Collector-Emitter Saturation Voltage

1.0

V

Base-Emitter On voltage

1.5

V

Gain Band width Product

8

MHz



RANK

C

D

E

F

RANGE

40-80

60-120

100-200

160-320