BC847BSG-AL6-R datasheet(2/3 Pages) UTC

2 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

BC847BS

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

Ver.a



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCES

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

6.0

Continuous Collector Current

100

Power Dissipation

325

Derate above 25°C

2.8

mW/°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

357

°C/W



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCES

IC=10µA, IE=0

Collector-Emitter Breakdown Voltage

BVCEO

IC=10mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO

IE=10µA, IC=0

6.0

Collector Cut-Off Current

ICBO

VCB=30V

VCB=30V, TA=150°C

5.0

μA

Collector-Emitter Saturation Voltage

VCE(sat)

IC=10mA, IB=0.5mA

0.25

IC=100mA, IB=5.0mA

0.6

Base-Emitter Turn-On Voltage

VBE(on)

IC=2.0mA, VCE=5.0V

0.58

0.70

IC=10mA, VCE=5.0V

0.77

DC Current Gain

hFE

IC=2.0mA, VCE=5.0V

200

450

Transition Frequency

IC=10mA, VCE=5.0V, f=100MHz

100

MHz

Output Capacitance

Cobo

VCB=10V, f=1.0MHz

4.5

Noise Figure

IC=0.2mA,

VCE=5.0V,

RS=2.0kΩ,

f=1.0kHz, BW=200Hz

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