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MMDT2227G-AL6-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # MMDT2227G-AL6-R
Description  NPN & PNP GENERAL PURPOSE AMPLIFIER
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMDT2227G-AL6-R Datasheet(HTML) 2 Page - Unisonic Technologies

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MMDT2227
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R218-019.D
ABSOLUTE MAXIMUM RATINGS* (TA=25°C , unless otherwise specified)(Note 2)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
TR1
VCEO
40
V
TR2
-60
Collector-Base Voltage
TR1
VCBO
75
V
TR2
-60
Emitter-Base Voltage
TR1
VEBO
6
V
TR2
-5.0
Collector Current - Continuous
TR1
IC
600
mA
TR2
-600
Derate above 25°C
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
415
°С/W
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
TR1
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=10mA, IB=0 (Note)
40
V
Collector-Base Breakdown Voltage
V(BR)CBO IC=10 µA, IE=0
75
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
6
V
Collector Cutoff Current
ICBO
VCB= 60V, IE=0
10
nA
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0
10
nA
ON CHARACTERISTICS
DC Current Gain
hFE
IC=0.1mA, VCE=10V
35
IC=1mA, VCE=10V
50
IC=10mA, VCE=10V
75
IC=150mA, VCE=10V
100
300
IC=150mA, VCE= 1V (Note)
50
IC=500mA, VCE=10V
40
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
IC=150mA, IB=15mA
0.3
V
IC=500mA, IB=50mA
1.0
V
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
IC=500mA, IB=50mA
2.0
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
fT
IC= 20mA, VCE=20V, f =100MHz 300
MHz
Output Capacitance
COB
VCB=10 V, IE=0, f=100 kHz
8
pF
Input Capacitance
CIB
VEB=0.5V, IC=0, f=100 kHz
25
pF
Noise Figure
NF
IC=100µA, VCE=10V,
RS=1.0kΩ, f =1.0kHz
4
dB
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%



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