MMDT8150

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R218-017.b

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

40

V

Collector-Emitter Voltage

32

V

Emitter-Base Voltage

6

V

Collector Current (DC)

800

mA

Collector Current (Pulse)

1.5 (Note 2)

A

Power Dissipation

200 (total) (Note 3)

mW

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. 150mW per element must not be exceeded.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

40

V

Collector-Emitter Breakdown Voltage

32

V

Emitter-Base Breakdown Voltage

6

V

Collector Cut-Off Current

0.5

µA

Emitter Cut-Off Current

0.5

µA

Collector-Emitter Saturation Voltage

(Note 1)

40

60

mV

0.2

0.3

V

0.3

0.5

V

Base-Emitter Voltage

1

V

DC Current Gain

180

560

40

82

Current Gain-Bandwidth Product

150

MHz

Output Capacitance

15

pF

Note: 1. Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%