 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
2SK3666G-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
2SK3666G-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
|
|
1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD 2SK3666 Preliminary JFET www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R206-109.a N-CHANNEL JUNCTIN SILICON FET DESCRIPTION The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK3666 is suitable for low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. FEATURES * Low IGSS * Low CRSS ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 2SK3666G-AE3-R SOT-23 S D G Tape Reel Note: Pin Assignment: A: Anode K: Cathode (1) R: Tape Reel (2) AE3: SOT-23 (3) G: Halogen Free and Lead Free 2SK3666G-AE3-R (1)Packing Type (2)Package Type (3)Green Package MARKING 3666G |
Similar Part No. - 2SK3666G-AE3-R |
|
Similar Description - 2SK3666G-AE3-R |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
