DTB123EG-AE3-R datasheet(2/3 Pages) UTC

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DTB123E

Preliminary

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R225-005.a



ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-12

Output Current

-500

Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL SPECIFICATIONS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Input Voltage

VIN(OFF)

VCC =-5V, IOUT =-100μA

-0.5

VIN(ON)

VOUT=-0.3V, IO=-20mA

-3

Output Voltage

VOUT(ON)

IOUT/IIN=-50mA/-2.5mA

-0.1

-0.3

Input Current

IIN

VIN=-5V

-3.8

Output Current

IOUT(OFF)

VCC=-50V, VIN=0V

-0.5

μA

ON CHARACTERISTICS

DC Current Gain

hFE

VOUT=-5V, IOUT=-50mA

SMALL SIGNAL CHARACTERISTICS

Input Resistance

1.54

2.2

2.86

kΩ

Resistor Ratio

R2/R1

0.8

1.2

Transition Frequency (Note)

VCE =-10V, IE =50mA, f=100MHz

200

MHz

Note: Transition frequency of the device

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