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MJE13003-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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MJE13003-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 8 page ![]() UNISONIC TECHNOLOGIES CO., LTD MJE13003-R NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 8 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R221-022.A NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen-Free 1 2 3 MJE13003L-R-x-T92-B MJE13003G-R-x-T92-B TO-92 B C E Tape Box MJE13003-L-R-x-T92-K MJE13003G-R-x-T92-K TO-92 B C E Bulk Note: Pin assignment: E: Emitter B: Base C: Collector MARKING |
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